Littelfuse LSIC2SD GEN2 SiC Schottky Diodes

Littelfuse LSIC2SD GEN2 Silicon Carbide (SiC) Schottky Diodes provide improved efficiency, reliability, and thermal management in various applications. The diodes have an operating junction temperature of +175°C maximum. The positive temperature coefficient of the diodes supports safe operation and ease of paralleling. Other features of the Littelfuse LSIC2SD GEN2 SiC Schottky Diodes include high-surge capability and negligible reverse recovery current. The switching behavior of the diodes is extremely fast and temperature-independent. Compared to Si bipolar diodes, these diodes provide dramatically reduced switching losses. LSIC2SD GEN2 SiC Schottky Diodes are ideal for EV charging stations, solar inverters, switch-mode power supplies, and more. These diodes are available in a variety of packages and voltage/current ratings, including 650V (6A to 40A) and 1200V (5A to 40A).


  • Operating junction temperature of +175°C
  • Dramatically reduced switching losses compared to Si bipolar diodes
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior


  • Boost diodes in PFC or DC/DC stages
  • EV charging stations
  • Industrial motor drives
  • Solar inverters
  • Switch-mode power supplies
  • Uninterruptible power supplies
Published: 2017-05-24 | Updated: 2022-08-24