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Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs

Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs amplify performance in versatile TO-247-4, TO-247-4L, and TO-247AB packages. These MOSFETs feature high switching speed with low gate charge, design flexibility, and reliability. The SICW0x 1200V SiC MOSFETs include a 21mΩ to 120mΩ typical wide on-resistance range and reliable performance. These SiC MOSFETs deliver superior thermal properties and a fast intrinsic diode to ensure smooth, efficient operation in challenging conditions. The SICW0x SiC MOSFETs are available in 3-pin and 4-pin (Kelvin source) configurations. Typical applications include motor drives, welding equipment, power supplies, renewable energy systems, charging infrastructure, cloud systems, and Uninterruptible Power Supply (UPS).

Features

  • 1200V MOSFET with SiC technology
  • Superior thermal properties and low switching losses
  • Fast, reliable switching: Intrinsic body diode improves efficiency and ruggedness
  • Superior thermal properties and low switching losses
  • High switching speed with low gate charge
  • 21mΩ to 120mΩ (typical) wide on-resistance selection
  • Avalanche ruggedness
  • Available in 3-pin and 4-pin (Kelvin source) configurations 

Applications

  • Motor drives
  • Welding equipment
  • Power supplies
  • Renewable energy systems
  • Charging infrastructure
  • Uninterruptible Power Supply (UPS) systems
  • Cloud systems
Micro Commercial Components (MCC) SICW0x 1200V SiC N-Channel MOSFETs

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Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs

650V SiC MOSFETs feature high-speed switching capability, and come in a TO-247 package.

Learn Moreabout Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs View Productsrelated to Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs
View Results ( 10 ) Page
Part Number Datasheet Package/Case Forward Transconductance - Min Fall Time Id - Continuous Drain Current Pd - Power Dissipation Qg - Gate Charge Rds On - Drain-Source Resistance Rise Time Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage
SICW025N120H-BP SICW025N120H-BP Datasheet TO-247AB-3 18.6 S 12 ns 86 A 375 W 305 nC 45 mOhms 55 ns - 10 V, + 25 V 3 V
SICW025N120H4-BP SICW025N120H4-BP Datasheet TO-247-4 18.6 S 12 ns 86 A 375 W 305 nC 45 mOhms 55 ns - 10 V, + 25 V 3 V
SICW040N120H-BP SICW040N120H-BP Datasheet TO-247AB-3 15 S 11 ns 62 A 326 W 229 nC 75 mOhms 50 ns - 10 V, + 25 V 2.7 V
SICW040N120H4-BP SICW040N120H4-BP Datasheet TO-247-4 15 S 11 ns 62 A 326 W 229 nC 75 mOhms 50 ns - 10 V, + 25 V 2.7 V
SICW021N120P-BP SICW021N120P-BP Datasheet TO-247AB-3 24.4 S 14 ns 100 A 469 W 200 nC 33.6 mOhms 49 ns - 10 V, + 22 V 3 V
SICW021N120P4-BP SICW021N120P4-BP Datasheet TO-247-4 24.4 S 12 ns 100 A 469 W 200 nC 33.6 mOhms 29 ns - 10 V, + 22 V 3 V
SICW080N120H-BP SICW080N120H-BP Datasheet TO-247AB-3 6.5 S 26.4 ns 33 A 224 W 131 nC 134 mOhms 64 ns - 10 V, + 25 V 3 V
SICW080N120H4-BP SICW080N120H4-BP Datasheet TO-247-4 6.5 S 26.4 ns 33 A 224 W 131 nC 134 mOhms 64 ns - 10 V, + 25 V 3 V
SICW120N120H-BP SICW120N120H-BP Datasheet TO-247AB-3 6.2 S 33 ns 24 A 166 W 67 nC 200 mOhms 24 ns - 10 V, + 25 V 2.95 V
SICW120N120H4-BP SICW120N120H4-BP Datasheet TO-247-4 6.2 S 33 ns 24 A 166 W 67 nC 200 mOhms 24 ns - 10 V, + 25 V 2.95 V
Published: 2024-08-13 | Updated: 2024-09-04