Micron 176-Layer NAND Universal Flash Storage (UFS) 3.1

Micron 176-Layer NAND Universal Flash Storage (UFS) 3.1 is a lighting-fast Flash memory solution based on 3D Replacement Gate technology, optimized for high-end and flagship phones. The 175-layer UFS 3.1 unlocks 5G's potential with up to 75% faster sequential write and random read performance than the prior 96-layer generation, enabling downloads of two-hour 4K movies in as little as 9.6s. Micron 176-layer UFS 3.1 features a compact design ideal for the high capacity, small form factors required in mobile devices. Micron 176-layer NAND UFS 3.1 is offered in 128GB, 256GB, 512GB, 1TB, and 2TB capacities.


  • Improved performance - 75% faster sequential write and 70% faster random read performance over previous 96-layer generation
  • Improved endurance of up to 2x the improved total bytes written vs. the previous 96-layer generation product
    • Twice the total data can be stored without degrading device reliability
  • Faster downloads - ability to download a 10-minute 4K (2160 pixels) YouTube video stream in 0.7s or a two-hour 4K movie in 9.6s
  • Smoother mobile experience - 10% shorter latency than previous 96-layer generation for faster response times and a more reliable mobile experience


  • Mobile
  • Automotive
  • Clientele
  • Consumer
  • Data centers
  • Flash adoption in workloads such as data lakes, artificial intelligence, and big data analytics


Published: 2021-09-01 | Updated: 2023-02-16