onsemi AFGHxL25T Single N-Channel 1200V 25A IGBTs
onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.
Features
- Extremely efficient trench with field stop technology
- Maximum junction temperature (TJ) of 175°C
- Short circuit rated and low saturation voltage
- Fast switching and tightened parameter distribution
- AEC-Q101 qualified, PPAP available upon request
- These devices are Pb-free, halogen-free/BFR-free, and are RoHS-compliant
Applications
- HEV-EV PTC heater
- HEV-EV e-compressor
- OBC
Pin Connections
View Results ( 4 ) Page
| Part Number | Datasheet | Package/Case | Collector-Emitter Saturation Voltage | Pd - Power Dissipation |
|---|---|---|---|---|
| AFGH4L25T120RW |  |
TO-247-4 | 1.37 V | 416 W |
| AFGH4L25T120RWD | |
TO-247-4 | 1.37 V | 416 W |
| AFGHL25T120RW | |
TO-247-3 | 1.38 V | 468 W |
| AFGHL25T120RWD | |
TO-247-3 | 1.38 V | 468 W |
Published: 2024-07-22
| Updated: 2024-08-02