onsemi NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET
onsemi NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability than silicon. The onsemi MOSFET features low ON resistance and a compact chip size to ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- Typ. RDS(on) = 20mΩ @ VGS = 15V
- Typ. RDS(on) = 16mΩ @ VGS = 18V
- Ultra-low gate charge (QG(tot) = 196nC)
- Low effective output capacitance (Coss = 296pF)
- 100% UIL tested
- This device is Halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)
Applications
- UPS
- DC-DC converter
- Boost inverter
Application Circuit
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Published: 2022-11-10
| Updated: 2024-06-19