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onsemi NTHL012N065M3S Silicon Carbide (SiC) MOSFET

onsemi NTHL012N065M3S Silicon Carbide (SiC) MOSFET is an EliteSiC® 650V M3S planar MOSFET optimized for fast-switching power applications. The device delivers low on-resistance and low switching losses, supporting efficient power conversion in compact, high-performance designs. The NTHL012N065M3S implements planar SiC technology designed to operate reliably with negative gate-voltage drive and turn-off spikes on the gate. The SiC MOSFET provides optimum performance with 18V gate drive and also supports operation with 15V gate drive for design flexibility.

The onsemi NTHL012N065M3S SiC MOSFET is ideal for switch-mode power supplies, solar inverters, uninterruptible power supplies, energy storage systems, and EV charging infrastructure. The NTHL012N065M3S is offered in a TO-247-3L package and supports high junction-temperature operation for demanding power electronics applications.

Features

  • EliteSiC 650V M3S planar SiC MOSFET technology for fast-switching applications
  • Reliable planar technology operation with negative gate-voltage drive and turn-off gate spikes
  • Optimized performance with 18V gate drive and strong performance with 15V gate drive
  • Low EON and EOFF switching losses with new M3S technology
  • Low output capacitance for high-speed switching applications
  • Ultra-low total gate charge for efficient switching operation
  • 100% avalanche tested device
  • Halide-free and RoHS-compliant with exemption 7a
  • Pb-free 2LI on second-level interconnection

Applications

  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptible power supplies
  • Energy storage systems
  • EV charging infrastructure

Specifications

  • Drain-to-source voltage of 650V
  • Typical RDS(ON) of 12.2mΩ at VGS = 18V
  • Maximum drain current of 123A at TC = 25°C
  • Continuous drain current of 87A at TC = 100°C
  • Total gate charge of 135nC typical
  • Output capacitance of 281pF typical
  • Dynamic gate-to-source voltage range of -10V to +22.6V
  • Recommended operating gate-to-source voltage range of -3V to +18V
  • Single-pulse avalanche energy of 259mJ
  • Junction-to-case thermal resistance of 0.35°C/W
  • Operating junction and storage temperature range of -55°C to +175°C
  • TO-247-3L package

Package Style

Application Circuit Diagram - onsemi NTHL012N065M3S Silicon Carbide (SiC) MOSFET

Thermal Response Characteristics

Performance Graph - onsemi NTHL012N065M3S Silicon Carbide (SiC) MOSFET
Published: 2026-07-09 | Updated: 2026-07-14