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onsemi NTHL016N065M3S Silicon Carbide (SiC) MOSFET

onsemi NTHL016N065M3S Silicon Carbide (SiC) MOSFET is an EliteSiC® 650V M3S planar MOSFET optimized for fast-switching power applications. The device combines low on-resistance, low capacitance, and low switching losses to support efficient power conversion in compact high-performance systems. The NTHL016N065M3S uses planar SiC technology designed for reliable operation with negative gate-voltage drive and turn-off gate spikes. The SiC MOSFET delivers optimum performance with 18V gate drive and also operates well with 15V gate drive for design flexibility.

The onsemi NTHL016N065M3S Silicon Carbide (SiC) MOSFET is ideal for switch-mode power supplies, solar inverters, uninterruptible power supplies, energy storage systems, and EV charging infrastructure. The NTHL016N065M3S is available in a TO-247-3L package and supports high-temperature power electronics designs with operation up to +175°C junction temperature.

Features

  • EliteSiC 650V M3S planar SiC MOSFET technology for fast-switching applications
  • Reliable planar technology operation with negative gate-voltage drive and turn-off gate spikes
  • Optimized performance with 18V gate drive and strong performance with 15V gate drive
  • Low EON and EOFF switching losses with M3S technology
  • Low output capacitance for high-speed switching applications
  • Ultra-low total gate charge for efficient switching operation
  • 100% avalanche tested device
  • Halide-free and RoHS-compliant with exemption 7a
  • Pb-free 2LI on second-level interconnection

Applications

  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptible power supplies
  • Energy storage systems
  • EV charging infrastructure

Specifications

  • Drain-to-source voltage of 650V
  • Typical RDS(ON) of 16.8mΩ at VGS = 18V
  • Maximum drain current of 94A at TC = 25°C
  • Continuous drain current of 66A at TC = 100°C
  • Total gate charge of 100nC typical
  • Output capacitance of 202pF typical
  • Gate-to-source voltage range of -10V to +22.6V
  • Recommended operating gate-to-source voltage range of -3V to +18V
  • Single-pulse avalanche energy of 180mJ
  • Junction-to-case thermal resistance of 0.45°C/W
  • Operating junction and storage temperature range of -55°C to +175°C
  • TO-247-3L package

Package Style

onsemi NTHL016N065M3S Silicon Carbide (SiC) MOSFET

Thermal Response Characteristics

Performance Graph - onsemi NTHL016N065M3S Silicon Carbide (SiC) MOSFET
Published: 2026-07-09 | Updated: 2026-07-14