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onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET is built using high-performance PowerTrench technology for extremely low RDS(on) switching performance and ruggedness. This P-channel MOSFET offers high power and current-handling capabilities in a widely used surface-mount package. The NTTFS007P02P8 MOSFET features -20V drain to source voltage, ±8V gate to source voltage, 3.8°C/W thermal resistance, junction to case, and 4.5Ω gate resistance. This P-channel  MOSFET is Pb-free, Halide-free, and RoHS compliant. Typical applications include load switch, battery management, power management, and reverse polarity protection.

Features

  • Maximum RDS(on) = 6.5mΩ at VGS = -4.5V, ID = -14A
  • Maximum RDS(on) = 9.8mΩ at VGS = -2.5V, ID = -11A
  • Maximum RDS(on) = 20mΩ at VGS = -1.8V, ID = -9A
  • High-performance Trench technology for extremely low RDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Pb−free and Halide-free
  • RoHS compliant

Applications

  • Load switch
  • Battery management
  • Power management
  • Reverse polarity protection

Specifications

  • -20V drain to source voltage
  • ±8V gate to source voltage
  • 3.8°C/W thermal resistance, junction to case
  • 4.5Ω gate resistance
  • -55°C to 150°C operating and storage temperature range

Typical Performance Characteristics

Performance Graph - onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

Dimensions

Mechanical Drawing - onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET
Published: 2025-11-19 | Updated: 2025-11-27