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onsemi NVMFWS0D4N04XM Single N-Channel Power MOSFETs

onsemi NVMFWS0D4N04XM Single N-Channel Power MOSFETs are available in a 5mm x 6mm SO8-FL package with a compact design. These MOSFETs feature 40V drain-to-source voltage, ±20V gate-to-source voltage, and 197W power dissipation (TC=25°C). The NVMFWS0D4N04XM power MOSFETs offer low resistance (RDS(on)) to minimize conduction losses and low capacitance to minimize driver losses. These MOSFETs are AEC-Q101 qualified and PPAP capable. The NVMFWS0D4N04XM power MOSFETs are Pb, halogen and BFR free, and are RoHS compliant. Typical applications include motor drive, battery protection, reverse battery protection, synchronous rectification, switching power supplies, and power switches.

Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • AEC-Q101 qualified
  • PPAP capable
  • Pb, halogen, and BFR free
  • RoHS compliant
  • 5mm x 6mm SO8-FL package with a compact design

Applications

  • Motor drive
  • Battery protection
  • Synchronous rectification
  • Reverse battery protection
  • Switching power supplies
  • Power switches (high side driver, low side driver, and H-bridges, etc.)

Specifications

  • 40V drain-to-source voltage
  • ±20V gate-to-source voltage
  • 197W power dissipation (TC=25°C)
  • 2396mJ single pulse avalanche energy
  • -55°C to 175°C operating junction and storage temperature range

Single N-Channel MOSFET

onsemi NVMFWS0D4N04XM Single N-Channel Power MOSFETs

Additional Resource

Published: 2026-02-25 | Updated: 2026-04-09