onsemi NVMTS1D1N04C N-Channel MOSFET
onsemi NVMTS1D1N04C N-Channel MOSFET is a 40V single N-channel power MOSFET designed for compact, high-current switching applications. The device uses onsemi PowerTrench® T6 technology and a Power 88 package to support efficient power switching in space-constrained designs. The MOSFET helps minimize conduction losses with low on-resistance and reduce driver losses with low gate charge and capacitance. The NVMTS1D1N04C MOSFET is AEC-Q101-qualified and PPAP-capable, supporting automotive and other production environments that require qualified, traceable power devices.
The onsemi NVMTS1D1N04C N-Channel MOSFET is ideal for power-switching applications, including high-side and low-side drivers and H-bridge designs. The NVMTS1D1N04C is housed in a DFNW8 Power 88 package and supports operation across a -55°C to +175°C junction and storage temperature range.
Features
- Single N-channel PowerTrench T6 MOSFET for power-switching applications
- Small-footprint Power 88 package for compact design layouts
- Low RDS(on) to help minimize conduction losses
- Low gate charge and capacitance to help reduce driver losses
- AEC-Q101-qualified and PPAP-capable for automotive applications
- Pb-free and RoHS-compliant device options
Applications
- Power switches (high side driver, low side driver, and H-bridges)
- Automotive applications
Specifications
- Drain-to-source voltage of 40V
- Maximum RDS(ON) of 1.1mΩ at VGS = 10V
- Continuous drain current of 277A at TC = 25°C
- Continuous drain current of 196A at TC = 100°C
- Gate-to-source voltage of ±20V
- Typical total gate charge of 86nC at VGS = 10V
- Typical input capacitance of 5410pF
- Typical output capacitance of 3145pF
- Typical reverse transfer capacitance of 82pF
- Single-pulse drain-to-source avalanche energy of 721mJ
- Junction-to-case thermal resistance of 0.98°C/W
- Operating junction and storage temperature range of -55°C to +175°C
- Package
- DFNW8 Power 88 package
- 8mm x 8mm package size
Package Style
