onsemi NVMYS4D6N06C N-Channel MOSFET
onsemi NVMYS4D6N06C N-Channel MOSFET is a 60V single N-channel PowerTrench® T6 MOSFET created for compact and efficient power-switching applications. The device uses an LFPAK Power 56 package with enhanced thermal performance for designs that need high current capability in a small footprint. The NVMYS4D6N06C reduces conduction losses with low on-resistance and minimizes driver losses with low gate charge and capacitance. The MOSFET is AEC-Q101-qualified and PPAP-capable, supporting automotive applications that require enhanced board-level reliability.
The onsemi NVMYS4D6N06C N-Channel MOSFET is designed for power-switching applications, including high-side and low-side drivers and H-bridge designs. The NVMYS4D6N06C is available in an LFPAK-4 package and supports operation across a -55°C to +175°C junction and storage temperature range.
Features
- Single N-channel PowerTrench T6 MOSFET for power-switching applications
- Enhanced thermal performance for efficient automotive power designs
- Low RDS(on) to help minimize conduction losses
- Low gate charge and capacitance to help reduce driver losses
- AEC-Q101-qualified and PPAP-capable for automotive applications
- Pb-free and RoHS-compliant device options
Applications
- Power switches
- High-side drivers
- Low-side drivers
- H-bridges
- Automotive
Specifications
- Drain-to-source voltage of 60V
- Maximum RDS(ON) of 4.7mΩ at VGS = 10V
- Continuous drain current of 92A at TC = 25°C
- Continuous drain current of 65A at TC = 100°C
- Gate-to-source voltage of ±20V
- Typical total gate charge of 19nC at VGS = 10V
- Typical input capacitance of 1530pF
- Typical output capacitance of 1095pF
- Typical reverse transfer capacitance of 7pF
- Single-pulse drain-to-source avalanche energy of 524mJ
- Junction-to-case thermal resistance of 1.89°C/W
- Operating junction and storage temperature range of -55°C to +175°C
- Package
- LFPAK-4 Power 56 package
- 5mm x 6mm package size
Package Style
