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onsemi NVNJWS1K6N061L N-Channel MOSFET

onsemi NVNJWS1K6N061L N-Channel MOSFET features low RDS(on) and low gate threshold with integrated ESD protection. This MOSFET offers a drain‑to‑source voltage of 60V, ±20V gate-to-source voltage, and 6.47A pulsed drain current. The NVNJWS1K6N061L MOSFET is AEC-Q101 qualified and PPAP capable, and is Pb-free. This MOSFET operates over the -55°C to +175°C temperature range. Typical applications include low-side load switches, DC-DC converters (buck and boost circuits), OBC, motor control, fan pumps, and LED lighting.

Features

  • Low RDS(on) and low gate threshold
  • Low input capacitance
  • ESD-protected gate
  • AEC-Q101 Qualified and PPAP capable
  • Wettable flank for enhanced optical inspection
  • Pb-free device

Applications

  • Low-side load switch
  • DC−DC converters (buck and boost circuits)
  • OBC
  • Motor control
  • Fan pumps
  • LED lighting
onsemi NVNJWS1K6N061L N-Channel MOSFET

Dimension Diagram

Mechanical Drawing - onsemi NVNJWS1K6N061L N-Channel MOSFET
Published: 2026-07-27 | Updated: 2026-07-30