onsemi NXH600B100H4Q2F2S1G Si/SiC Hybrid Module
onsemi NXH600B100H4Q2F2S1G Si/SiC Hybrid Module is a three-channel flying capacitor boost module. Each channel contains two 1000V, 200A IGBTs, and two 1200V, 60A SiC diodes. The module also contains an NTC thermistor. Applications include solar inverters and uninterruptible power supply systems.
Features
- 3-channel boost in a Q2 package
- Extremely efficient trench with field stop technology
- Low switching loss reduces system power dissipation
- Module design offers high power density
- Low inductive layout
- Lead-free
Applications
- Solar inverters
- Uninterruptible power supply systems
- MPPT boost stages
Specifications
- IGBT (T11, T12, T21, T22, T31, T32)
- 1000V maximum collector-emitter voltage
- ±20V maximum gate-emitter voltage
- 30V maximum positive transient gate-emitter voltage
- 173A maximum continuous collector current
- 519A maximum pulsed peak collector current
- 422W maximum power dissipation
- IGBT inverse diode (D11, D12, D21, D22, D31, D32)
- 1200V maximum peak repetitive reverse voltage
- 66A maximum continuous forward current
- 98A maximum repetitive peak forward current
- 101W maximum power dissipation
- Silicon carbide Schottky diode (D13, D14, D23, D24, D33, D34)
- 1200V maximum peak repetitive reverse voltage
- 63A maximum continuous forward current
- 189A maximum repetitive peak forward current
- 204W maximum power dissipation
- Start-up diode (D15, D25, D35)
- 1200V maximum peak repetitive reverse voltage
- 35A maximum continuous forward current
- 105A maximum repetitive peak forward current
- 84W maximum power dissipation
- 12.7mm maximum creepage distance
- Temperature ranges
- -40°C to +175°C junction
- -40°C to +150°C operation under switching conditions
Schematic
Learn More About EliteSiC
onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
Published: 2024-01-30
| Updated: 2024-06-18