Qorvo QPD1004A GaN Input Matched Transistors
Qorvo QPD1004A GaN Input Matched Transistors are 25W (P3dB), 50Ω input matched discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT) which operate from 30MHz to 1400MHz on a 50V supply rail. An integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The Qorvo QPD1004A transistors are ideally suited forbase stations, radar, and communications applications, and support both CW and pulsed modes of operation. These devices are housed in an industry-standard 6mm x 5mm x 0.85mm surface-mount DFN package.
Features
- 25W (P3dB), 50Ω input matched discrete GaN on SiC HEMT
- Operates from 30MHz to 1400MHz on a 50V supply rail
- Integrated input matching network
- Low thermal resistance package
- CW and pulse capable
- Surface-mount, 6mm x 5mm x 0.85mm DFN package
- SVHC- and PFOS-free
- Lead-free, Halogen-/antimony-free, and RoHS-compliant
Applications
- Military radar
- Land mobile and military radio communications
- Test instrumentation
- Wideband or narrowband amplifiers
- Jammers
Specifications
- +145V maximum breakdown voltage
- 3.6A maximum drain current
- 55V maximum drain voltage
- 50mA typical drain bias current
- -7V to +2V maximum gate voltage range, -2.8V typical
- 7.2mA maximum gate current range
- 27.6W maximum power dissipation, 25W operating
- 29.7dBm maximum RF input power
- 0.6GHz to 1.2GHz frequency range
- Linear gain ranges
- 18.4dB to 21.2dB power-tuned
- 18.8dB to 22.6dB efficiency-tuned
- Output power ranges at 3dB compression
- 45.7dBm to 46.0dBm power-tuned
- 43.5dBm to 45.0dBm efficiency-tuned
- Power-added efficiency ranges at 3dB compression
- 59.5% to 63.5% power-tuned
- 65.0% to 73.7% efficiency-tuned
- Gain ranges at 3dB compression
- 15.4dB to 18.2dB power-tuned
- 15.8dB to 19.6dB efficiency-tuned
- +320°C maximum mounting temperature for 30s
- -40°C to +85°C operating temperature range
- +250°C maximum channel temperature
- Moisture Sensitivity Level (MSL) 3
- ESD ratings per ANSI/ESD/JEDEC JS-001
- 250V Human Body Model (HBM)
- 1000V Charged Device Model (CDM)
Functional Block Diagram
Related Development Tool
Qorvo QPD1004AEVB Evaluation Board
Purpose‑built to speed device characterization and amplifier prototyping in the 100MHz to 1GHz band.