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ROHM Semiconductor RJ1P10BAT P-Channel Power MOSFET

ROHM Semiconductor RJ1P10BAT P-Channel Power MOSFET has a drain-source voltage (VDSS) rating of -100V and a continuous drain current (ID) rating (VGS = 10V) of ±105A. It comes in a high-power TO-263AB package and is 100% Rg and UIS tested. The ROHM Semiconductor RJ1P10BAT has a 201W power dissipation (PD) and a static drain-source on-state resistance (RDS(on)) of 9.4mΩ (typ.) (VGS = -10V, ID = -50A) or 10.4mΩ (typ.) (VGS = -6V, ID = -50A).

Features

  • Low on - resistance
  • High power package (TO-263AB)
  • Pb-free plating; RoHS compliant
  • Halogen-free
  • 100% Rg and UIS tested

Applications

  • Switching
  • Motor drives

Pin Out/Circuit Diagram

Mechanical Drawing - ROHM Semiconductor RJ1P10BAT P-Channel Power MOSFET
Published: 2026-06-23 | Updated: 2026-07-07