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ROHM Semiconductor RQ5G040AT -40V P-Channel Small Signal MOSFET

ROHM Semiconductor RQ5G040AT -40V P-Channel Small Signal MOSFET is a -40V drain-source voltage (VDSS) and ±4.0A continuous drain current (ID) rated device. The drain-source on-state resistance [RDS(ON)] is 46.0mΩ (max.) (VGS = -10V, ID = -4.0A) and comes in a 2.8mm x 2.9mm SOT-346T (TSMT3) package. The ROHM Semiconductor RQ5G040AT MOSFET is ideal for switching and motor drive applications.

Features

  • Low on-resistance
  • Small surface mount package - SOT-346T (TSMT3)
  • Pb-free lead plating and RoHS-compliant
  • Halogen-free
  • 100% Rg and UIS tested

Applications

  • Switching
  • Motor drives

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • 46.0mΩ (max.) (VGS = -10V, ID = -4.0A)
    • 57.0mΩ (max.) (VGS = -4.5V, ID = -4.0A)
  • 1.0W power dissipation (PD)
  • Total gate charge (Qg)
    • 16.8nC (typ.) (VDD = -20V, ID = -4A, VGS = -10V)
    • 8.5nC (typ.) (VDD = -20V, ID = -4A, VGS = -4.5V)
  • +150°C junction temperature (Tj)

Circuit Diagram

Schematic - ROHM Semiconductor RQ5G040AT -40V P-Channel Small Signal MOSFET

Package Diagram

Mechanical Drawing - ROHM Semiconductor RQ5G040AT -40V P-Channel Small Signal MOSFET
Published: 2025-07-25 | Updated: 2025-08-19