STMicroelectronics STL059N4S8AG Power MOSFET
STMicroelectronics STL059N4S8AG Power MOSFET is a 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology. The Smart STripFET F8 technology provides low on-resistance for high-current power distribution when paired with STi²Fuse gate drivers. This power MOSFET is AEC-Q101 qualified and 100% avalanche tested. The STL059N4S8AG power MOSFET comes in a PowerFLAT 5x6 package with wettable flanks. This power MOSFET features Moisture Sensitivity Level 1 (MSL1) grade and operates within the -55°C to 175°C temperature range. The STL059N4S8AG power MOSFET is ideal for use in power distribution applications.
Features
- AEC-Q101 qualified
- MSL1 grade
- Logic level
- 100% avalanche tested
- Wettable flank package
- Extremely low RDS(on)
- PowerFLAT 5x6 package
Specifications
- 40VDS drain-source volatge
- ±20 gate-source voltage
- 1680A drain current (pulsed)
- 187W total power dissipation
- 60A single pulse avalanche current
- 603mJ single pulse avalanche energy
- -55°C to 175°C operating temperature range
Overview Image
Application Notes
- AN6379: Correlation between rectangular and triangular power pulses in the thermal and electrical behavior of power MOSFETs
- AN4337 - The avalanche issue: comparing the impacts of the IAR and EAS parameters
- AN4390: ST’s MOSFET technologies for uninterruptible power supplies
- AN4191: Power MOSFET: Rg impact on applications
- AN3267: Impact of power MOSFET VGS on buck converter performance
Published: 2026-03-27
| Updated: 2026-04-08