Vishay / Siliconix 4th Generation EF Series MOSFETs
Vishay / Siliconix 4th Generation EF Series MOSFETs offer an extremely low figure-of-merit (FOM) rating for high-performance switching and high efficiency. The MOSFET FOM is calculated as ON-resistance (R(DS)ON) multiplied by gate charge (Qg). Built on Vishay 4th generation super-junction technology, these MOSFETs feature a low typical ON-resistance range of 0.088Ω to 0.225Ω at VGS=10V and a gate charge down to 21nC. For improved switching performance, these devices provide low effective output capacitances (Co(er) and Co(tr)). These values translate into reduced conduction and switching losses to save energy. Vishay / Siliconix 4th Generation EF Series MOSFETs are offered in PowerPAK® 8x8 and TO-220AB packages. The series is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.
Features
- 4th Generation E Series technology
- Low FOM (R(DS)ON) x Qg)
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- PowerPAK 8 x 8, TO-220AB package options
- -55°C to +150°C operating, junction, and storage temperature range
- Halogen free
- RoHS compliant
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
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Published: 2019-08-06
| Updated: 2023-12-31