Vishay / Siliconix EF High Voltage Power MOSFETs
Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
The EF power MOSFETs also incorporate 650VDS high voltage variants that offer low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. These variants are available in TO-220FP, TO-220AB, TO-247AC, TO-263, TO-247, and PowerPak 8 x 8 packages. These MOSFETs are specifically designed for welding, induction heating, motor drives, and server and telecom applications.
Features
- Fast Body Diode MOSFET, using E Series Technology
- Reduced Trr / Qrr / Irrm
- Low figure-of-merit (FOM) Ron x Qg
- Ultra-low gate charge (Qg)
- Low reverse recovery charge (Qrr) increases reliability in zero voltage switching topologies
- Ultra-low on-resistance and gate charge
- Reduced conduction and switching losses
- Offered in TO-220FP, TO-220AB, TO-247AC, TO-263, TO-247, and PowerPak 8 x 8 packages
- Withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing
- RoHS-compliant and halogen-free
Applications
- Telecommunications - server and telecom power supplies
- Lighting
- High-intensity discharge
- LEDs
- Consumer and computing - ATX power supplies
- Industrial
- Welding
- Motor drivers
- Battery chargers
- Renewable energy
- Solar PV inverters
- Switch-mode power supplies
- Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
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