STMicroelectronics Power MOSFETs

More About STMicroelectronics

STMicroelectronics' Power MOSFET portfolio offers a broad range of breakdown voltages from -500V to 1700V, with low gate charge, low on-resistance, and improved packaging. ST's process technology for both high-voltage and low-voltage MOSFETs has enhanced power handling capability, resulting in high-efficiency solutions.

Features

-500V to 1700V breakdown voltage range
More than 30 package options for low-voltage to very-high-voltage Power MOSFETs, including
- Breakthrough top-side cooling HU3PAK package allowing higher power density and improved thermal management
- 4-lead TO-247 with dedicated control pin for increased switching efficiency
- H2PAK for high-current capability
- Highly innovative surface-mount leadless TO-LL
- 1mm-high surface-mount PowerFLAT family (2mm x 2mm to 8mm x 8mm) with excellent thermal performance thanks to a large metal drain pad

Improved gate charge and lower on-state resistance to meet challenging efficiency requirements
Intrinsic fast body diode option for selected product lines
Wide portfolio of automotive-grade power MOSFETs
Application-oriented technologies

Applications

Server and telecom power
Microinverters
Fast chargers

Automotive
Home and professional appliances

Chart - STMicroelectronics Power MOSFETs

FDmesh

The STMicroelectronics FDmesh™ Power MOSFET series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
View Products List

MDmesh

STMicroelectronics' proprietary MDmesh Power MOSFET technologies are optimized for the 150V to 650V breakdown voltage range. With drain current as high as 140A, on-resistance down to 12mΩ, and optional fast recovery and/or clamping diodes, these devices come in a wide range of miniature and high-power packages: I2PAK, IPAK, ISOTOP, MLPD4, SO-8, SOT-223, TO-220, TO-247, TO-252, TO-263, TO-92, and VFDFPN-8. They are optimized for high-efficiency SMPS, lighting and inverters, lamp ballasts using half-bridge configuration, and DC-DC converters.
View Products List

STripFET

STMicroelectronics' proprietary STripFET™ II, III, and V, and STripFET DeepGATE Power MOSFET technologies are optimized for this range of breakdown voltages. These devices feature a drain current range up to 480A and on-resistance as low as 22mΩ. The MOSFETs offer high avalanche ruggedness, and optional logic level drive and are available in a wide range of packages: H2PAK2, I2PAK, ISOTOP, P2PAK, POLARPAK, PowerSO-10, SO-8, SOT-223, TO-220, TO-247, TO-252, TO-263, TO-92, VFDFPN-8. These devices are optimized for applications ranging from automotive switching and DC-DC converters to high-efficiency switching for power management in portable products.
View Products List

SuperMESH

STMicroelectronics' proprietary SuperMESH™ Power MOSFET technologies are optimized for up to 1500V breakdown voltage range and drain current as high as 140A. They are designed to minimize on-state resistance, optimize switching performance, and sustain high-energy pulses in avalanche and commutation modes. These devices come in a wide range of miniature and high-power packages: I2PAK, IPAK, ISOTOP, MLPD4, SO-8, SOT-223, TO-220, TO-247, TO-252, TO-263, TO-3PF, TO-92, VFDFPN-8. They are optimized for high-efficiency SMPS, lighting and inverters, lamp ballasts using half-bridge configuration, very high-efficiency switching-mode power supplies, circuit breakers, and DC-DC converters.
View Products List