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Toshiba TPN4R203NC U-MOS VIII MOSFET

Toshiba TPN4R203NC U-MOS VIII MOSFET is an N-channel device in a small, thin package. It features a low drain-source on-resistance of 3.5mΩ (typ.) at 10V and low leakage current of 10µA (max) at 30V. Toshiba TPN4R203NC U-MOS VIII MOSFET is ideally suited for use in Li-ion secondary batteries and power management switches.

Features

  • Small, thin package
  • Low drain-source on-resistance:
    • RDS(ON) = 3.5mΩ (typ.) (VGS = 10V)
  • Low leakage current:
    • IDSS = 10μA (max) (VDS = 30V)
  • Enhancement mode:
    • Vth = 1.3 to 2.3V (VDS = 10V, ID = 0.2mA)

Applications

  • Lithium-ion secondary batteries
  • Power management switches

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Published: 2013-04-15 | Updated: 2022-03-11