Newest Transistors – Mouser Finland

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Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

10.31.2025

- Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10.31.2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET

10.21.2025

- Features superior switching performance, ideal for high-efficiency power-management applications.

Diodes Incorporated DXTP80x PNP Bipolar Transistors

09.18.2025

- PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.

Diodes Incorporated DXTN80x NPN Bipolar Transistors

09.17.2025

- Offers a small form factor, thermally efficient PowerDI 3333-8 package, for higher-density products.

Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors

11.14.2024

- Features a proprietary structure for achieving ultra-low VCE(SAT) performance.

Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

10.01.2024

- Provides low on-resistance in a thermally efficient small form factor package.

Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET

08.01.2024

- 20V N-Ch MOSFET designed to minimize the RDS(ON), available in an X2-DFN0806-3 package.

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs

06.24.2024

- Designed to minimize the on-state resistance and maintain excellent switching performance.

Diodes Incorporated DMP3014SFDE 30V P-Ch Enhancement Mode MOSFETs

05.01.2024

- Offers low on-resistance & gate threshold voltage, while maintaining switching performance.

Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor

05.01.2024

- Available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package.

Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

04.01.2024

- Designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance.

Diodes Incorporated DMP68D1LV Dual P-Channel Enhancement Mode MOSFET

01.01.2024

- Offers low on-resistance and input capacitance, while maintaining superior switching performance.

Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

06.02.2023

- Designed to minimize the on-state resistance yet maintain superior switching performance.

Diodes Incorporated DMTH46M7SFVWQ N-Ch Enhancement Mode MOSFET

03.30.2023

- AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.

Diodes Incorporated MJD Automotive Medium Power Transistors

03.21.2023

- Devices are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

Diodes Incorporated DMN52D0UV N-Channel Enhancement Mode MOSFET

03.06.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMN3732UFB4 N-Channel Enhancement Mode MOSFET

01.24.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET

01.18.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMTH41M2SPSQ N-Channel Enhancement Mode MOSFET

01.17.2023

- AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.

Diodes Incorporated DMN52D0LT N-Channel Enhancement Mode MOSFET

01.04.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMN52D0UVA N-Channel Enhancement Mode MOSFET

01.04.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated FMMT411FDBWQ Low Voltage Avalanche Transistor

11.23.2022

- A silicon planar bipolar transistor designed for operating in avalanche mode.

Diodes Incorporated DMTH8001STLWQ Automotive Enhancement-Mode MOSFET

05.11.2022

- AEC-Q101-qualified 80V, 270A N-Channel Enhancement-Mode MOSFET in a PowerDI®1012-8 (TOLL) package.

Viewing: 1 - 24 of 24

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TDK-Lambda i1R ORing MOSFET Modules

02.05.2026

- High-efficiency and low-loss power devices designed to replace traditional diodes.

IXYS X4-Class Power MOSFETs

02.02.2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

Qorvo QPD1014A GaN Input Matched Transistors

01.20.2026

- 15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

Qorvo QPD1011A GaN Input Matched Transistors

01.19.2026

- 7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

Qorvo QPD1004A GaN Input Matched Transistors

01.19.2026

- 25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

12.26.2025

- This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.

Infineon Technologies OptiMOS™ 6 80V Power MOSFETs

12.23.2025

- Sets industry benchmark performance with a wide portfolio offering.

onsemi NVMFD5877NL Dual N-Channel MOSFET

12.19.2025

- Designed for compact and efficient designs including high thermal performance.

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs

12.19.2025

- Engineered to meet the stringent demands of electric vehicle (EV) applications.

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor

12.04.2025

- E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.

onsemi NxT2023N065M3S EliteSiC MOSFETs

12.04.2025

- Feature low effective output capacitance and ultra-low gate charge.

Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

12.01.2025

- DTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.

onsemi FDC642P-F085 Small Signal MOSFET

11.25.2025

- Offers a high-performance trench technology for extremely low RDS(on) and fast switching speed.

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

11.25.2025

- Built using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.

iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs

11.24.2025

- Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.

onsemi NVD5867NL Single N-Channel Power MOSFET

11.20.2025

- Features 60V drain-to-source voltage, 39mΩ drain-to-source on resistance, and AEC-Q101 qualified.

onsemi NVD6824NL Single N-Channel MOSFETs

11.20.2025

- Offer low RDS(on) to minimize conduction losses and high current capability.

Central Semiconductor 1,700 V N-Channel Silicon Carbide (SiC) MOSFETs

11.20.2025

- These MOSFETS are designed for high-speed switching and fast reverse recovery applications.

onsemi NVMFS5832NL Single N-Channel Power MOSFET

11.19.2025

- High-performance MOSFET designed for low-voltage applications requiring efficient power switching.

onsemi NVMFS5830NL Single N-Channel Power MOSFET

11.19.2025

- High-efficiency single n-channel power MOSFET designed for demanding power management applications.

onsemi AFGB30T65RQDN IGBT

11.19.2025

- Offers a high figure of merit with low conduction and switching losses.

STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor

11.07.2025

- Built on GaN technology and designed for demanding power conversion applications.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10.31.2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

Comchip Technology AMMBT2222AM NPN Automotive Small Signal Transistor

10.31.2025

- The device has a 75V collector-base voltage rating and a 600mA collector current-continuous rating.

Comchip Technology AMMBT2907AM PNP Automotive Small Signal Transistor

10.31.2025

- The device has a -60V collector-base voltage rating & a -600mA collector current-continuous rating.

Viewing: 1 - 25 of 650

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