5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications. 

Types of Transistors

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Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS Product Type Technology Mounting Style Package/Case Transistor Polarity
MACOM GaN FETs 270W GaN HEMT 48V 2496 to 2690MHz 53In Stock
Min.: 1
Mult.: 1
Reel: 50

GaN FETs GaN Screw Mount H-87265J-2 N-Channel
MACOM RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz 90In Stock
Min.: 1
Mult.: 1
Reel: 250

RF MOSFET Transistors Si Screw Mount HB2SOF-8-1 N-Channel
MACOM GaN FETs 300W GaN HEMT 48V 2496 to 2690MHz 17In Stock
Min.: 1
Mult.: 1
Reel: 50

GaN FETs GaN Screw Mount H-87265J-2 N-Channel
MACOM RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz Non-Stocked
Min.: 50
Mult.: 50
Reel: 50

RF MOSFET Transistors Si Screw Mount HB2SOF-8-1 N-Channel
MACOM GaN FETs 480W GaN HEMT 48V 3800MHz
50In Stock
Min.: 1
Mult.: 1
Reel: 50

GaN FETs GaN Screw Mount H-37248C-4 N-Channel
MACOM GaN FETs 280W GaN HEMT 48V 3400 to 3600MHz
30In Stock
Min.: 1
Mult.: 1
Reel: 50

GaN FETs GaN Screw Mount H-37248C-4 N-Channel
MACOM GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz
40In Stock
Min.: 1
Mult.: 1
Reel: 50

GaN FETs GaN Screw Mount H-37248C-4 N-Channel
MACOM GaN FETs 400W GaN HEMT 48V 3400 to 3600MHz
40In Stock
Min.: 1
Mult.: 1
Reel: 50

GaN FETs GaN Screw Mount H-37248C-4 N-Channel