Results: 26
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 3 980In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 39 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 161 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 865In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 6 A 346 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 65 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 739In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 17 A 217 mOhms - 5 V, + 23 V 5.7 V 27 nC - 55 C + 175 C 85 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 753In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 783In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 64 A 30 mOhms - 5 V, + 23 V 5.7 V 67 nC - 55 C + 175 C 300 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 466In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 28 A 111 mOhms - 5 V, + 23 V 5.7 V 44 nC - 55 C + 175 C 126 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1 477In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 63 A 42 mOhms - 5 V, + 23 V 5.7 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 444In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 692In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 54 A 51 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 211 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1 051In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 45 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 175 C 183 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 911In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 222In Stock
720Expected 30/07/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 254In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 53 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 332In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 95In Stock
240Expected 24/02/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1In Stock
240Expected 02/03/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 81In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 200In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 80In Stock
240Expected 03/07/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 111 mOhms - 5 V, + 23 V 5.7 V 19 nC - 55 C + 175 C 104 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 151In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 135In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 132In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
480Expected 24/02/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
480Expected 16/06/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC