Newest Transistors – Mouser Finland

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Types of Transistors

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Manufacturer = Diodes Incorporated Return to the Products tab to modify your current filters.

Diodes Incorporated DMN2005K N-Ch E-Mode Field-Effect Transistor

10.19.2026

- Features low on-resistance, a very low gate threshold voltage, and fast switching performance.

Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

10.31.2025

- Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10.31.2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET

10.21.2025

- Features superior switching performance, ideal for high-efficiency power-management applications.

Diodes Incorporated DXTP80x PNP Bipolar Transistors

09.18.2025

- PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.

Diodes Incorporated DXTN80x NPN Bipolar Transistors

09.17.2025

- Offers a small form factor, thermally efficient PowerDI 3333-8 package, for higher-density products.

Diodes Incorporated DXTN/P 78Q & 80Q Bipolar Transistors

07.24.2025

- Offers 30V, 60V, & 100V ratings, with exceptional conduction efficiency and thermal performance.

Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors

11.14.2024

- Features a proprietary structure for achieving ultra-low VCE(SAT) performance.

Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

10.01.2024

- Provides low on-resistance in a thermally efficient small form factor package.

Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET

08.01.2024

- 20V N-Ch MOSFET designed to minimize the RDS(ON), available in an X2-DFN0806-3 package.

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs

06.24.2024

- Designed to minimize the on-state resistance and maintain excellent switching performance.

Diodes Incorporated DMP3014SFDE 30V P-Ch Enhancement Mode MOSFETs

05.01.2024

- Offers low on-resistance & gate threshold voltage, while maintaining switching performance.

Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor

05.01.2024

- Available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package.

Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

04.01.2024

- Designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance.

Diodes Incorporated DMP68D1LV Dual P-Channel Enhancement Mode MOSFET

01.01.2024

- Offers low on-resistance and input capacitance, while maintaining superior switching performance.

Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

06.02.2023

- Designed to minimize the on-state resistance yet maintain superior switching performance.

Diodes Incorporated DMTH46M7SFVWQ N-Ch Enhancement Mode MOSFET

03.30.2023

- AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.

Diodes Incorporated MJD Automotive Medium Power Transistors

03.21.2023

- Devices are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

Diodes Incorporated DMN52D0UV N-Channel Enhancement Mode MOSFET

03.06.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMN3732UFB4 N-Channel Enhancement Mode MOSFET

01.24.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET

01.18.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMTH41M2SPSQ N-Channel Enhancement Mode MOSFET

01.17.2023

- AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.

Diodes Incorporated DMN52D0LT N-Channel Enhancement Mode MOSFET

01.04.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMN52D0UVA N-Channel Enhancement Mode MOSFET

01.04.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated FMMT411FDBWQ Low Voltage Avalanche Transistor

11.23.2022

- A silicon planar bipolar transistor designed for operating in avalanche mode.

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Diodes Incorporated DMN2005K N-Ch E-Mode Field-Effect Transistor

10.19.2026

- Features low on-resistance, a very low gate threshold voltage, and fast switching performance.

Qorvo QPD1000A GaN Input Matched Transistor

10.14.2026

- 50Ω input-matched discrete GaN-on-SiC HEMT that operates from 30MHz-1215MHz on a 28V supply rail.

Qorvo QPD1426/QPD1426L GaN RF Power Transistors

10.06.2026

- 220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz.

Qorvo QPD2562L GaN RF Power Transistor

10.06.2026

- A 200W to 300W discrete GaN-on-SiC HEMT that operates from 2.5GHz to 2.9GHz and 2.9GHz to 3.3GHz.

Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET Module

10.02.2026

- 1400V CoolSiC MOSFET module for electric commercial-vehicle traction inverters.

onsemi NVMTS1D1N08X N‐Channel Power MOSFETs

09.17.2026

- 80V automotive MOSFETs with low on-resistance and soft-recovery body diode.

Vishay SQD50P04-09L 40V Automotive P-Channel Power MOSFET

09.16.2026

- The device is ideal for automotive, power distribution, and industrial power control applications.

Texas Instruments JFE2325 Dual Low-Power N-Channel JFET

09.09.2026

- Intended for use with very high-impedance sensors such as electret condenser microphones (ECMs).

IXYS IXSH110N120L3KHV SiC MOSFET

09.02.2026

- 1200V, 18mΩ, and 112A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS IXSH150N120L3KHV SiC MOSFET

09.02.2026

- 1200V, 13.5mΩ, and 147A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS IXSH50N120L3KHV SiC MOSFET

09.02.2026

- 1200V, 55mΩ, and 48.3A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS IXSH65N120L3KHV SiC MOSFET

09.02.2026

- 1200V, 35mΩ, and 67A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS IXSH100N120L3KHV SiC MOSFET

09.02.2026

- 1200V, 21mΩ, and 102A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

Microchip Technology HV-D3 mSiC® Power Modules

09.01.2026

- Simplifies and accelerates adoption of SSTs in data centers & other high-voltage power applications.

onsemi NXH011F120M3F2 SiC MOSFETs

08.25.2026

- Full-bridge EliteSiC MOSFET modules with 11mΩ on-resistance and 1200V rating.

onsemi 80V Single N-Channel Power MOSFETs

08.25.2026

- Offer low RDS(on) to minimize conduction losses & low QG and capacitance to minimize driver losses.

STMicroelectronics STGI15C60S 3-Phase Inverter & IGBT SLLIMM

08.19.2026

- This device is ideal for motor drives operating up to 20kHz in hard-switching circuitry.

iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET

08.12.2026

- Automotive 200V N-channel MOSFET with SuperQ technology and TO-220 packaging.

STMicroelectronics SGT1D5R10MEA PowerGaN Transistor

08.11.2026

- Offers extremely low conduction losses, high current capability, and ultra-fast switching operation.

STMicroelectronics STH4N150-2AG N-Channel Power MOSFET

08.10.2026

- Designed to ensure a high level of voltage and robustness for the automotive applications.

STMicroelectronics SGT3D5R10MEB PowerGaN Transistor

08.10.2026

- Designed for high-efficiency and high-power switching applications.

onsemi EMD4DXV6 Digital Transistors ( BRTs)

07.30.2026

- Designed to replace a single device and its external resistor bias network.

onsemi NVNJWS1K6N061L N-Channel MOSFET

07.30.2026

- Features low RDS(on) and low gate threshold with integrated ESD protection.

ROHM Semiconductor 600V Super Junction (SJ) MOSFETs

07.21.2026

- Compact, low-profile package options that provide excellent heat dissipation.

onsemi GaNEXUS™ GaN FETs

07.08.2026

- Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.

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