RN Automotive Bias Resistor Built-in Transistors

Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

Types of Discrete Semiconductors

Change category view
Results: 163
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS Product Type Technology Mounting Style Package/Case
Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F 37 368In Stock
Min.: 1
Mult.: 1
: 3 000

MOSFETs Si SMD/SMT TSOP6F
Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723) 41 033In Stock
Min.: 1
Mult.: 1
: 8 000

Digital Transistors SMD/SMT VESM-3
Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346) 5 942In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT S-Mini-3
Toshiba Digital Transistors AUTO AEC-Q PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346) 5 980In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT S-Mini-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-323 (USM) 1 948In Stock
6 000Expected 14/08/2026
Min.: 1
Mult.: 1
: 3 000

BJTs - Bipolar Transistors Si SMD/SMT USM-3
Toshiba Digital Transistors AUTO AEC-Q TR NPN Q1BSR=47kOhm, Q1BER=10kOhm, VCEO=50V, IC=0.1A (SOT-346) 5 953In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT SC-59-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=10kO, VCEO=-50V, IC=-0.1A (SOT-416) 5 900In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT SSM-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-346) 2 715In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT S-Mini-3
Toshiba Digital Transistors AUTO AEC-Q TR PNP Q1BSR=4.7kOhm, Q1BER=10kOhm, VCEO=-50V, IC=-0.1A (SOT-346) 5 985In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT S-Mini-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=2.2kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-416) 5 998In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT SSM-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6) 6 210In Stock
Min.: 1
Mult.: 1
: 4 000

BJTs - Bipolar Transistors Si SMD/SMT ES-6
Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6) 5 372In Stock
Min.: 1
Mult.: 1
: 3 000

BJTs - Bipolar Transistors Si SMD/SMT US-6
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6) 7 662In Stock
Min.: 1
Mult.: 1
: 4 000

BJTs - Bipolar Transistors Si SMD/SMT ES-6
Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-363 (US6) 5 617In Stock
Min.: 1
Mult.: 1
: 3 000

BJTs - Bipolar Transistors Si SMD/SMT US-6
Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F 5 950In Stock
Min.: 1
Mult.: 1
: 3 000

MOSFETs Si SMD/SMT TSOP6F
Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F 4 724In Stock
Min.: 1
Mult.: 1
: 3 000

MOSFETs Si SMD/SMT TSOP6F
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6) 7 688In Stock
Min.: 1
Mult.: 1
: 4 000

BJTs - Bipolar Transistors Si SMD/SMT ES-6
Toshiba Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-563) 30 270In Stock
Min.: 1
Mult.: 1
: 4 000

Digital Transistors SMD/SMT ES-6
Toshiba MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F 6 294In Stock
Min.: 1
Mult.: 1
: 3 000

MOSFETs Si SMD/SMT TSOP6F
Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:16.2V @1mA VESD:+/-30V IPP:2.5A IR:0.1uA SOD-323 2 113In Stock
6 000Expected 10/08/2026
Min.: 1
Mult.: 1
: 3 000

SOD-323-2
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=47kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723) 6 107In Stock
8 000Expected 14/08/2026
Min.: 1
Mult.: 1
: 8 000

Digital Transistors SMD/SMT VESM-3
Toshiba Digital Transistors AUTO AEC-Q Single PNP Q1BSR=4.7kO, VCEO=-50V, IC=-0.1A (SOT-416) 3 000In Stock
Min.: 1
Mult.: 1
: 3 000

Digital Transistors SMD/SMT SSM-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini) 11 084In Stock
Min.: 1
Mult.: 1
: 3 000

BJTs - Bipolar Transistors Si SMD/SMT S-Mini-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini) 5 764In Stock
Min.: 1
Mult.: 1
: 3 000

BJTs - Bipolar Transistors Si SMD/SMT S-Mini-3
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini) 7 585In Stock
Min.: 1
Mult.: 1
: 3 000

BJTs - Bipolar Transistors Si SMD/SMT S-Mini-3