New Discrete & Power Modules

Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.