New Transistors

ROHM Semiconductor 600V Super Junction (SJ) MOSFETs are designed to meet the increasing demand for smaller, more efficient power supplies across a wide range of applications. These SJ MOSFETs are designed for the R60xxXNx series and PrestoMOS™ R60xxWNx series as new 600V SJ MOSFETs. The 600V SJ MOSFETs are compact, low-profile package options that provide excellent heat dissipation. This makes the devices suitable for applications that require space savings and higher power density, including power supplies for AI servers and industrial equipment.
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ROHM Semiconductor 600V Super Junction (SJ) MOSFETsCompact, low-profile package options that provide excellent heat dissipation.21.7.2026 -
onsemi GaNEXUS™ GaN FETsWide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.8.7.2026 -
Vishay MXP075 MaxSiC® 750V N-Channel MOSFETsFeatures a 750V drain-source voltage, a fast switching speed & a 3μs short-circuit withstand time.19.6.2026 -
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETsBased on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.18.6.2026 -
Infineon Technologies EasyPACK™ S ModulesEfficient power conversion in a compact, easy-to-integrate package built for modern power designs.12.6.2026 -
Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETsAdvanced N‑channel devices engineered for high-efficiency power switching.27.5.2026 -
Texas Instruments 2N7002L 6V N-channel MOSFETsDesigned to minimize the on-state resistance while maintaining fast switching performance.18.5.2026 -
Infineon Technologies CIPOS™ Prime Automotive CoolSiC™ Power ModulesPower Modules are designed for high performance in xEV applications.6.5.2026 -
onsemi NVBYST0D8N08X Single N-Channel Power MOSFETOptimized for high‑voltage operation and withstands fast switching and high-current stresses.14.4.2026 -
ROHM Semiconductor High-Density SiC Power ModulesTRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.10.4.2026 -
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFETLow switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.7.4.2026 -
onsemi NTMFD0D9N02P1E MOSFETDual N-channel MOSFET designed with low Rg for fast switching applications.6.4.2026 -
Vishay VS-HOT200C080 200A 80V Power MOSFET ModuleThis device reduces board space requirements by up to 15% compared to standard discrete solutions.2.4.2026 -
Toshiba N-Channel/P-Channel Power MOSFETsIdeal for high-speed switching, power management switches, DC-DC converters, and motor drivers.31.3.2026 -
STMicroelectronics STL059N4S8AG Power MOSFETA 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.31.3.2026 -
Infineon Technologies OptiMOS™ 6 60V Power MOSFETsDelivers superior performance to OptiMOS 5 via robust power MOSFET technology.27.3.2026 -
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETsApplication-optimized performance, enabling peak performance for data centers, servers, & AI.27.3.2026 -
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFETDelivers ultra-low conduction and switching losses in a robust TO-220 package.24.3.2026 -
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.20.3.2026 -
Infineon Technologies OptiMOS™ 8 Power MOSFETsThese are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].17.3.2026 -
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded ModulesFeatures 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.17.3.2026 -
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional SwitchesThese devices are a great fit for serving as battery disconnect switches in various applications.17.3.2026 -
onsemi NVMFD5873NL Dual N-Channel Power MOSFETsDesigned for compact and efficient designs, including high thermal performance.13.3.2026 -
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.10.3.2026 -
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.10.3.2026 -
